QUENCHING OF EL2 DEFECT-INDUCED LUMINESCENCE IN GALLIUM-ARSENIDE BY COPPER ATOMS

It is shown that the introduction of copper atoms into gallium arsenid e crystals containing EL2 antisite defects results in virtually comple te vanishing of the EL2-induced luminescence bands with radiation maxi ma at h nu(m) = 0.63 and 0.68 eV. This occurs as a result of the deact ivation of the EL2 defects as a result of their interaction with coppe r atoms, which account for the formation of electrically inactive EL2- Cu complexes. (C) 1997 American Institute of Physics.