INVESTIGATION OF THE HETEROEPITAXIAL STRUCTURES (P-3C N-6H)-SIC/

The parameters of the epitaxial structures {3C/6H}-SiC have been inves tigated. The heteroepitaxial growth was conducted by sublimation epita xy in an open system. The presence of the 3C polytype was confirmed by x-ray investigations. The capacitance-voltage and current-voltage cha racteristics and the electroluminescence spectra of the p-n structures were investigated. It was found that a thin, slightly doped, defectiv e p-6H-SiC layer was formed between p-3C-SiC and n-6H-SiC in Phe heter opolytypic structures; this layer detetmined the electrical properties of the diode structures. (C) 1997 American Institute of Physics.