QUANTUM-DOT LASERS - PRINCIPAL COMPONENTS OF THE THRESHOLD CURRENT-DENSITY

Authors
ZAITSEV SV GORDEEV NY KOPCHATOV VI GEORGIEVSKII AM USTINOV VM ZHUKOV AE EGOROV AY KOVSH AR LEDENTSOV NN KOPEV PS ALFEROV ZI BIMBERG D
Citation
Sv. Zaitsev et al., QUANTUM-DOT LASERS - PRINCIPAL COMPONENTS OF THE THRESHOLD CURRENT-DENSITY, Semiconductors, 31(9), 1997, pp. 947-949
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
9
Year of publication
1997
Pages
947 - 949
Database
ISI
SICI code
1063-7826(1997)31:9<947:QL-PCO>2.0.ZU;2-Q
Abstract
Injection heterolasers based on quantum dots grown by molecular-beam e pitaxy have been investigated. It is shown that the room-temperature t hreshold current density can be lowered to 15 A/cm(2) by decreasing th e nonradiative recombination and increasing the degree of carrier loca lization. The density of states in structures with vertically coupled quantum dots was investigated by the electroabsorption method. (C) 199 7 American Institute of Physics.