RADIATION HARDNESS OF POROUS SILICON

Authors
USHAKOV VV DRAVIN VA MELNIK NN KARAVANSKII VA KONSTANTINOVA EA TIMOSHENKO VY
Citation
Vv. Ushakov et al., RADIATION HARDNESS OF POROUS SILICON, Semiconductors, 31(9), 1997, pp. 966-969
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
9
Year of publication
1997
Pages
966 - 969
Database
ISI
SICI code
1063-7826(1997)31:9<966:RHOPS>2.0.ZU;2-L
Abstract
The effect of irradiation by 300-keV Ar+ ions on the properties of ele ctrochemically produced porous silicon is studied at doses of 5 x 10(1 4)-1 x 10(16) cm(-2). Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is s ubstantially greater than that of single crystal silicon. (C) 1997 Ame rican Institute of Physics.