FABRICATION OF HIGH-ASPECT-RATIO SILICON MICRO-TIPS FOR FIELD-EMISSION DEVICES

Authors
CHUNG IJ MURFETT DB HARIZ A HASKARD MR
Citation
Ij. Chung et al., FABRICATION OF HIGH-ASPECT-RATIO SILICON MICRO-TIPS FOR FIELD-EMISSION DEVICES, Journal of Materials Science, 32(18), 1997, pp. 4999-5003
Citations number
14
Categorie Soggetti
Material Science
Journal title
Journal of Materials Science → ACNP
ISSN journal
00222461
Volume
32
Issue
18
Year of publication
1997
Pages
4999 - 5003
Database
ISI
SICI code
0022-2461(1997)32:18<4999:FOHSMF>2.0.ZU;2-R
Abstract
The evolution of higher order {221} and {331} crystal planes during co rner undercutting in the anisotropic etching of (100) silicon is discu ssed, and the occurrence of highly vertical (72.5 degrees) {311} plane s unique to KOH etches are demonstrated. Using a combined etching tech nique, very high aspect ratio micro-tips are formed and their distinct advantages for vacuum microelectronics and field-emission devices (FE D) are described.