Cy. Chang et Bh. Tseng, CRYSTAL-GROWTH OF CDTE ALLOYED WITH ZN, SE AND S, Materials science & engineering. B, Solid-state materials for advanced technology, 49(1), 1997, pp. 1-4
Single crystals of CdTe-based quaternary alloys are grown by a vertica
l Bridgman method. The lattice constant of the quaternary ingot is pro
posed to match that of Cd0.8Zn0.2Te. To compensate the Zn segregation
in CdTe, a suitable amount of Se or S was added along with Zn. We foun
d that the compensate effect was not significant, particularly for the
CdZnTeS alloy. Nevertheless, an ingot with a fairly uniform lattice c
onstant was obtained for the CdZnTeSe alloy mainly because the effecti
ve segregation coefficient of Se was close to one. A study using doubl
e crystal X-ray diffractometry indicated that the addition of Se or S
to CdZnTe would degrade the crystal quality. (C) 1997 Elsevier Science
S.A.