CRYSTAL-GROWTH OF CDTE ALLOYED WITH ZN, SE AND S

Authors
Citation
Cy. Chang et Bh. Tseng, CRYSTAL-GROWTH OF CDTE ALLOYED WITH ZN, SE AND S, Materials science & engineering. B, Solid-state materials for advanced technology, 49(1), 1997, pp. 1-4
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
49
Issue
1
Year of publication
1997
Pages
1 - 4
Database
ISI
SICI code
0921-5107(1997)49:1<1:COCAWZ>2.0.ZU;2-#
Abstract
Single crystals of CdTe-based quaternary alloys are grown by a vertica l Bridgman method. The lattice constant of the quaternary ingot is pro posed to match that of Cd0.8Zn0.2Te. To compensate the Zn segregation in CdTe, a suitable amount of Se or S was added along with Zn. We foun d that the compensate effect was not significant, particularly for the CdZnTeS alloy. Nevertheless, an ingot with a fairly uniform lattice c onstant was obtained for the CdZnTeSe alloy mainly because the effecti ve segregation coefficient of Se was close to one. A study using doubl e crystal X-ray diffractometry indicated that the addition of Se or S to CdZnTe would degrade the crystal quality. (C) 1997 Elsevier Science S.A.