CHARACTERIZATION OF P-AGLNSE(2) N-ZN0.35CD0.65S POLYCRYSTALLINE THIN-FILM HETEROJUNCTIONS/

Authors
RAMESH PP HUSSAIN OM UTHANNA S NAIDU BS REDDY PJ
Citation
Pp. Ramesh et al., CHARACTERIZATION OF P-AGLNSE(2) N-ZN0.35CD0.65S POLYCRYSTALLINE THIN-FILM HETEROJUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 49(1), 1997, pp. 27-30
Citations number
19
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
49
Issue
1
Year of publication
1997
Pages
27 - 30
Database
ISI
SICI code
0921-5107(1997)49:1<27:COPNPT>2.0.ZU;2-5
Abstract
Polycrystalline thin film p-AglnSe(2)/n-Zn0.35Cd0.65S heterojunctions were fabricated and the current density-voltage, capacitance-voltage a nd spectral response characteristics of the junctions were studied. Th e heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 425 mV, a short-circuit current density of 30 mA cm(-2) and an electrical conversion efficiency of 7.5% have been o btained for a cell with an active area of 1 cm(2) under a solar input of 100 mW cm(-2). (C) 1997 Elsevier Science S.A.