HIGH-ENERGY ELECTRON-ELECTRON INTERACTIONS IN SILICON AND THEIR EFFECT ON HOT-CARRIER ENERGY-DISTRIBUTIONS

This paper presents results from the calculation of the high-energy el ectron-electron scattering rate in silicon based on a full energy-band structure obtained by the pseudopotential technique. The effects on t he scattering rate of the overlap integrals, wave-vector-dependent die lectric function and umklapp processes are described and the transitio n rate is compared with that obtained using a semiclassical analysis b ased on a parabolic energy dispersion. A hybrid Monte Carlo/iterative technique for solving the Boltzmann transport equation is used to obta in the electron energy distribution function generated by binary parti cle interactions in a one-dimensional system. (C) 1997 American Instit ute of Physics.