RESONANCE EFFECTS IN PHOTOLUMINESCENCE FROM DEEP TRAPS IN CDSXSE1-X DOPED GLASSES

We present photoluminescence studies on CdSxSe1-x semiconductor doped glasses with gap energies ranging from about 2 to 3 eV (400-600 nm). T he investigations were performed by near-resonance as well as temperat ure-dependent resonance Raman spectroscopy. On the basis of the strong ly resonant behavior of the deep trap photoluminescence with the excit onic states of the nanocrystallites, we have demonstrated that-besides the effect of photodarkening-inconsistencies in the experimental resu lts of semiconductor doped glasses presented in literature, could be d ue to changes in the electronic resonance conditions when experimental parameters are changed, (C) 1997 American Institute of Physics.