QUANTUM KINETICS REGIME DURING AND IMMEDIATELY AFTER LASER EXCITATIONOF SEMICONDUCTORS

Authors
BARAD S CHEMLA DS
Citation
S. Barad et Ds. Chemla, QUANTUM KINETICS REGIME DURING AND IMMEDIATELY AFTER LASER EXCITATIONOF SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 48(1-2), 1997, pp. 83-87
Citations number
20
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
48
Issue
1-2
Year of publication
1997
Pages
83 - 87
Database
ISI
SICI code
0921-5107(1997)48:1-2<83:QKRDAI>2.0.ZU;2-Q
Abstract
We investigated carrier dynamics in the semiconductor GaAs, during and just after creation by approximate to 30 fs laser pulses, much shorte r than the phonon and plasma time scales. We observed a quasi-instanta neous spread of the carrier population in momentum-energy space, that is not even qualitatively consistent with Boltzmann kinetics. The obse rvations are, however, in qualitative agreement with quantum kinetic t heories of carrier-carrier and carrier-phonon scattering. (C) 1997 Els evier Science S.A.