SPECTROSCOPY OF ONE-DIMENSIONAL EXCITONS IN GAAS QUANTUM WIRES

Citation
H. Akiyama et al., SPECTROSCOPY OF ONE-DIMENSIONAL EXCITONS IN GAAS QUANTUM WIRES, Materials science & engineering. B, Solid-state materials for advanced technology, 48(1-2), 1997, pp. 126-130
Citations number
30
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
48
Issue
1-2
Year of publication
1997
Pages
126 - 130
Database
ISI
SICI code
0921-5107(1997)48:1-2<126:SOOEIG>2.0.ZU;2-K
Abstract
One-dimensional (1D) properties of excitons have been optically studie d in T-shaped GaAs quantum wires formed by the cleaved edge overgrowth method with molecular beam epitaxy. Microscopic photoluminescence spe ctroscopy at low temperature has been useful both to characterize samp les and to investigate 1D physics. (C) 1997 Elsevier Science S.A.