THE RELATIONSHIP BETWEEN THE DISTRIBUTION OF ELECTRONIC STATES AND THE OPTICAL-ABSORPTION SPECTRUM OF AN AMORPHOUS-SEMICONDUCTOR - AN EMPIRICAL-ANALYSIS

Citation
Sk. Oleary et al., THE RELATIONSHIP BETWEEN THE DISTRIBUTION OF ELECTRONIC STATES AND THE OPTICAL-ABSORPTION SPECTRUM OF AN AMORPHOUS-SEMICONDUCTOR - AN EMPIRICAL-ANALYSIS, Journal of applied physics, 82(7), 1997, pp. 3334-3340
Citations number
40
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
7
Year of publication
1997
Pages
3334 - 3340
Database
ISI
SICI code
0021-8979(1997)82:7<3334:TRBTDO>2.0.ZU;2-W
Abstract
An elementary empirical model for the distribution of electronic state s of an amorphous semiconductor is presented. Using this model, we det ermine the functional form of the optical absorption spectrum, focusin g our analysis on the joint density of states function, which dominate s the absorption spectrum over the range of photon energies we conside r. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge o f an amorphous semiconductor, such as the Tauc gap and the absorption tail breadth, are related to the parameters that characterize the unde rlying distribution of electronic states. We, thus, provide the experi mentalist with a quantitative means of interpreting the physical signi ficance of their optical absorption data. (C) 1997 American Institute of Physics.