SWITCHING FIELD INTERVAL OF THE SENSITIVE MAGNETIC LAYER IN EXCHANGE-BIASED SPIN VALVES

Citation
Tgsm. Rijks et al., SWITCHING FIELD INTERVAL OF THE SENSITIVE MAGNETIC LAYER IN EXCHANGE-BIASED SPIN VALVES, Journal of applied physics, 82(7), 1997, pp. 3442-3451
Citations number
37
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
7
Year of publication
1997
Pages
3442 - 3451
Database
ISI
SICI code
0021-8979(1997)82:7<3442:SFIOTS>2.0.ZU;2-A
Abstract
The switching field interval, Delta H-s, of Ni-Fe-Co-based thin films and spin-valve layered structures, sputter-deposited on a Ta-buffer la yer, was studied. The switching field interval is the field range in w hich the magnetization reversal of a ferromagnetic layer takes place. In thin films, Delta H-s is determined by the uniaxial anisotropy, ind uced by growth in a magnetic field. This anisotropy increases with the ferromagnetic layer thickness and saturates at a thickness of 10-25 n m. It also depends on the alloy composition as well as on the choice o f the adjacent layers, In exchange-biased spin valves, an additional c ontribution to Delta H-s, was observed, which increases monotonically with increasing interlayer coupling. We explain this in terms of the e ffect on the magnetization reversal of the sensitive layer due to a si multaneous small, but temporary, magnetization rotation in the exchang e-biased layer and lateral variations of the interlayer coupling. In a ddition, the effect of biquadratic coupling on Delta H-s is discussed. Finally, the thermal stability of Delta H-s is investigated. (C) 1997 American Institute of Physics.