TEMPERATURE MAPPING OF REACTIVE GAS LAYER IN THERMAL PLASMA CHEMICAL-VAPOR-DEPOSITION

Citation
J. Larjo et al., TEMPERATURE MAPPING OF REACTIVE GAS LAYER IN THERMAL PLASMA CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 82(7), 1997, pp. 3560-3566
Citations number
34
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
7
Year of publication
1997
Pages
3560 - 3566
Database
ISI
SICI code
0021-8979(1997)82:7<3560:TMORGL>2.0.ZU;2-2
Abstract
Two-dimensional temperature maps of reactive gas layers were produced using pulsed laser Rayleigh scattering thermometry. The measurements w ere made in conditions of diamond film chemical vapor deposition (CVD) using a thermal inductively coupled plasma. In these conditions, the reactive gas layer is typically a few millimeters thick and the temper ature drops across the layer from 4000 K at the free stream boundary t o about 1200 K at the substrate, The reactive layer exhibits strong ch emical nonequilibrium. Rayleigh scattering was induced using a pulsed laser sheet at 532 nm wavelength. The scattered radiation was detected and calibrated with an intensified charge coupled device camera, Temp erature maps and axial profiles obtained under parametric variation of the gas flow conditions demonstrate how the technique can be employed to measure the reactive layer thickness and its radial distribution a cross the substrate. The results demonstrate that imaging Rayleigh sca ttering thermometry can be employed as a nonintrusive diagnostic tool to obtain useful experimental information pertinent to the gas phase c hemistry in diamond CVD under conditions of extremely large temperatur e gradients. (C) 1997 American Institute of Physics.