INFLUENCE OF THE SPATIAL EXTENT OF THE MOST PROBABLE POTENTIAL WELL ON THE DISTRIBUTION OF ELECTRONIC STATES IN DISORDERED SEMICONDUCTORS

We examine how the spatial extent of the most probable potential well influences the form of the distribution of electronic states in disord ered semiconductors. We show that, over most of the relevant energy sp ectrum, the spatial extent of this well does not vary greatly. A simpl e model, in which all potential wells are taken to be of the same spat ial scale, is demonstrated to have the same physical content as a mode l in which variations of the spatial scale of the most probable potent ial well are taken into account. (C) 1997 American Institute of Physic s.