ADDENDUM - DEEP EMISSION BAND AT GAINP GAAS INTERFACE/

Authors
KWOK SH YU PY UCHIDA K ARAI T
Citation
Sh. Kwok et al., ADDENDUM - DEEP EMISSION BAND AT GAINP GAAS INTERFACE/, Journal of applied physics, 82(7), 1997, pp. 3630-3632
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
82
Issue
7
Year of publication
1997
Pages
3630 - 3632
Database
ISI
SICI code
0021-8979(1997)82:7<3630:A-DEBA>2.0.ZU;2-1
Abstract
We have performed high pressure photoluminescence studies of the deep emission band in GaInP/ GaAs quantum well. Our results suggest that th is peak is related to donor-acceptor pair transitions in the GaAs well . (C) 1997 American Institute of Physics.