EFFECT OF THE STRUCTURE OF SEMICONDUCTOR LEAK SENSORS ON THEIR HYDROGEN SENSITIVITY

Authors
SAZHIN SG LUKONIN VP
Citation
Sg. Sazhin et Vp. Lukonin, EFFECT OF THE STRUCTURE OF SEMICONDUCTOR LEAK SENSORS ON THEIR HYDROGEN SENSITIVITY, Russian journal of nondestructive testing, 33(1), 1997, pp. 75-79
Citations number
17
Categorie Soggetti
Materials Science, Characterization & Testing
Journal title
Russian journal of nondestructive testing → ACNP
ISSN journal
10618309
Volume
33
Issue
1
Year of publication
1997
Pages
75 - 79
Database
ISI
SICI code
1061-8309(1997)33:1<75:EOTSOS>2.0.ZU;2-A
Abstract
We consider the theoretical principles of physicochemical processes de termining the hydrogen sensitivity of semiconductor leak sensors with various structures. We indicate the prospects for development of sensi tive elements based on Schottky barrier diode sensors.