T. Bacci et al., CHANGE IN SURFACE-MORPHOLOGY OF DIAMOND FILMS DEPOSITED BY DC PLASMA GLOW-DISCHARGE CVD, Materials science & engineering. B, Solid-state materials for advanced technology, 48(3), 1997, pp. 268-278
The influence of the deposition conditions on the morphology of two di
amond samples prepared by DC plasma glow discharge CVD has been invest
igated. A structural change has been observed from a [110] textured mo
rphology, to the morphology of randomly oriented grains with a heavily
disturbed crystalline structure, by decreasing the substrate temperat
ure from 1100 to 950 degrees C. Features of the different morphologies
have been studied by SEM and related to the results of Raman spectros
copy and X-ray diffraction. The growth side of the first sample presen
ts cubo-ochtaedral grains with low mutual misorientation while the gro
wth side of the second sample is characterised by ball-shaped structur
es due to an high density of renucleation on the growing planes, separ
ated by deep interdomain regions. The size of the grains forming the r
ounded structures decreases gradually towards the bottom of these regi
ons. The poorer crystalline quality of this sample is related to its R
aman spectrum, showing an higher luminescence and the presence of grap
hite-like phases all over the growth surface. Moreover an higher densi
ty of defects is evidenced by the higher broadening of the Raman diamo
nd line and of the Bragg diffraction peaks with respect to the texture
d sample. Analogous results have been reported for a microwave CVD rea
ctor. In this work we confirm the hypothesis that this structural chan
ge does not depend on the particular CVD method which are likely to pr
ovide the same film quality and morphology at different plasma conditi
ons if the activation of the reactant gases and the surface mobility a
re in the same range of values. (C) 1997 Elsevier Science S.A.