RADIATION HARDNESS OF POLYCRYSTALLINE DIAMOND THIN-FILMS IRRADIATED WITH 100 MEV I7+ IONS

Citation
N. Dilawar et al., RADIATION HARDNESS OF POLYCRYSTALLINE DIAMOND THIN-FILMS IRRADIATED WITH 100 MEV I7+ IONS, Thin solid films, 305(1-2), 1997, pp. 88-94
Citations number
36
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
305
Issue
1-2
Year of publication
1997
Pages
88 - 94
Database
ISI
SICI code
0040-6090(1997)305:1-2<88:RHOPDT>2.0.ZU;2-K
Abstract
Polycrystalline diamond thin films grown by hot-filament chemical vapo ur deposition (CVD) process were irradiated with 100 MeV I7+ ions. The as-deposited and irradiated films were characterized using micro-Rama n spectroscopy, glancing angle X-ray diffraction (XRD), resistivity me asurements and scanning electron microscopy (SEM) techniques. Defects and non-diamond carbon phases were seen to develop on irradiation up t o a fluence of 1.3 X 10(14) ions/cm(2). The extent of damage to the fi lms was found to be critically dependent on the crystalline quality of the film. The resulting changes were correlated with the hydrogen con centrations in the films as studied by elastic recoil detection analys is. (C) 1997 Elsevier Science S.A.