EFFECT OF THE PRESSURE ON THE CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM COPPER HEXAFLUOROACETYLACETONATE TRIMETHYLVINYLSILANE

The effects of the deposition pressure on the deposition rate and the properties of the copper film prepared by chemical vapor deposition we re studied. Copper films were deposited on titanium nitride (TiN) subs trates in a low-pressure warm-wall reactor using copper(I) hexafluoroa cetylacetonate trimethylvinylsilane, Cu(hfac)(tmvs), as the precursor. The deposition temperature was varied between 160 degrees C and 220 d egrees C, and the deposition pressure was varied in the range 0.25-1.0 Torr. The deposition rate decreased with total pressure in the low-te mperature region limited by surface reaction, whereas the rates were c onstant in the high-temperature region limited by mass transport. The decease of deposition rate in the region limited by surface reaction i s thought to be due to the by-product inhibition. The transition tempe ratures of the kinetic region and the surface morphology coincided wit h each other. In addition, both of them increased with the total press ure of the reactor. The surface roughness and resistivity decreased wi th total pressure, and showed rapid increase with deposition temperatu re. The effect of the partial pressure of the precursor on the deposit ion rate was also investigated. (C) 1997 Elsevier Science S.A.