PHOTOVOLTAMMETRY AND SURFACE-ANALYSIS OF MOSE2 THIN-FILMS PREPARED BYAN INTERCALATION-EXFOLIATION METHOD

Thin MoSe2 films on Ti substrates were prepared by an intercalation-ex foliation method. Large-area semiconductor films were obtained by this technique. Characterization of these films was done by cyclic voltamm etry, x-ray diffraction, and surface-analysis techniques. Highly repro ducible cyclic voltammograms were obtained, both in 5 mM ferrocene and 5 mM chloranil solutions in acetonitrile, with and without illuminati on. X-ray diffraction analyses showed the presence of a highly texture d MoSe2 film. The MoSe2 particles, 0.5 to 5 mu M diam, in the film beh ave as short-circuited microcells in which both reduction and oxidatio n processes can take place in solution.