OXYGEN SOLUBILITY IN SILICON MELT MEASURED IN SITE BY AN ELECTROCHEMICAL SOLID IONIC SENSOR

The oxygen solubility in molten silicon was measured in situ by an ele ctrochemical solid ionic sensor over a temperature range from the melt ing point to 1836 K. The result demonstrates, that the temperature dep endency of the solubility cannot be neglected, as might be concluded f rom previous publications. This is especially important for numerical simulations of the oxygen transport in the melt during the Czochralski silicon crystal growth process, because the oxygen solubility determi nes the source boundary condition along the crucible wall.