MODELING AND ANALYSIS OF THE SILICON EPITAXIAL-GROWTH WITH SIHCL3 IN A HORIZONTAL RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR

The growth of epitaxial Si on (100)-oriented Si wafers in a horizontal rapid thermal chemical vapor deposition (RTCVD) reactor has been inve stigated. Trichlorosilane was employed as a precursor diluted in H-2 c arrier gas at 1 atm reactor pressure. The growth rates in dependence o f the deposition uniformity, the input partial pressure of the precurs or, and the fluid dynamics were analyzed by a three-dimensional numeri cal simulation. Good agreement between predicted and measured growth r ates were found. Moreover, the experimental growth rates under mass tr ansport limitation were discussed in terms of gas-phase supersaturatio n and its impact on the surface morphology. Finally, it is demonstrate d that hydrodynamic effects in the RTCVD reactor influence strongly th e Si growth in the delivery rate limited regime.