THE PHASE CO1-XNIXSN2 - STRUCTURAL VARIATIONS BASED ON THE STACKING OF 2 DIFFERENT PLANAR NETS

Citation
U. Haussermann et al., THE PHASE CO1-XNIXSN2 - STRUCTURAL VARIATIONS BASED ON THE STACKING OF 2 DIFFERENT PLANAR NETS, Inorganic chemistry, 36(20), 1997, pp. 4307-4315
Citations number
19
Categorie Soggetti
Chemistry Inorganic & Nuclear
Journal title
ISSN journal
00201669
Volume
36
Issue
20
Year of publication
1997
Pages
4307 - 4315
Database
ISI
SICI code
0020-1669(1997)36:20<4307:TPC-SV>2.0.ZU;2-R
Abstract
The investigation of the tin-rich part of the ternary system Co/Ni/Sn yielded the phase Co1-xNixSn2 with the range of composition 0.23(3) < x < 0.59(3). When using a large excess of tin, Co1-xNixSn2 crystallize s at 500 degrees C in a structure isotypic to that of tetragonal PdSn2 whereas a modification with the orthorhombic CoGe2 structure type alw ays forms from a stoichiometric mixture of the elemental components or from a tin melt at temperatures above 550 degrees C, The structures o f Co0.625Ni0.375Sn2 were determined by single-crystal X-ray diffractio n methods (PdSn2-type space group I4(1)/acd, a=6.2360(5) Angstrom, c=2 3.588(2) Angstrom, Z=16; CoGe2-type space group Aba2, a=6.2439(4) Angs trom, b=62493(4) Angstrom, c=11.778(1) Angstrom, Z=8). Both structures have the same building unit consisting of three consecutive planar-ne ts 4(4), 3(2)434, 4(4) formed by tin atoms. The condensation of the bu ilding blocks in the c direction gives rise to different stacking sequ ences. In the PdSn2-type, a ABCD sequence is realized and the c axis i s doubled compared to the ideal CoGe2-type with AB stacking. Electron diffraction and high-resolution electron microscopy studies revealed t he existence of other, complex, stacking variants as well as stacking faults in the Co1-xNixSn2 system.