NOISE SQUEEZING IN A SEMICONDUCTOR-LASER WITH AN INHOMOGENEOUSLY BROADENED GAIN LINE

This paper is a theoretical analysis of the noise produced by a single -mode semiconductor laser. We allow for spectral hole-burning in the g ain line and for the nonlinear dependence of the carrier spontaneous r ecombination rate on the number of carriers in the active area. We sho w that these processes do not inhibit the squeezing of the outgoing ph oton flux noise below the shot noise level at high pump currents but t hat the degree of squeezing decreases considerably. Finally, we establ ish that these processes also considerably narrow the squeezing bandwi dth. (C) 1997 American Institute of Physics.