Structure and properties of V2O5 are described and the role of three t
ypes of oxygen atoms present in the lattice: vanadyl oxygen atoms O(1)
coordinated only to one vanadium atom, and bridging oxygen atoms O(2)
and O(3) coordinated to two and three vanadium atoms, respectively, i
s discussed. Equilibration of sas phase oxygen with vanadium oxides re
sults in the formation of the intrinsic defect structure of V2O5 consi
sting of oxygen vacancies. Discussion of the properties of vacancies a
s deduced from measurements of electrical conductivity, EPR and IR spe
ctra and the stability of different oxygen vacant sites as obtained fr
om quantum-chemical calculations is given. Mechanism of the reduction
of V2O5 through crystallographic shear, resulting in the formation of
V6O13 or V4O9, is illustrated. It is shown that because of a pronounce
d anisotropy of V2O5 crystal structure sensitivity of catalytic reacti
ons appears. Two types of crystal planes are exposed. The (0 1 0) basa
l plane has all chemical bonds almost fully saturated. The non-bonding
d-orbitals of V ions have the LUMO character and act as Lewis acid si
tes, whereas the lone electron pairs of bridging oxygen atoms have the
HOMO character and behave as Lewis basic sites. On the (1 0 0) and (0
0 1) planes cleavage leaves coordinatively unsaturated vanadium and o
xygen ions, which develop Bronsted acid-base interactions with reactin
g molecules, causing the heterolytic chemisorption. Oxygen vacancies i
n the lattice are replenished through oxidation by gas phase oxygen, w
hich sometimes is considered as oxygen chemisorption.