Silicon carbide films on silicon have been grown by annealing of pre-d
eposited C-60 film on silicon at T = 900 degrees C for 300 min. C-60 m
olecules are confined on the surface during annealing by a non-volatil
e carbon layer produced by irradiation of the C-60 film with an ion gu
n (Ar+ or Ga+). During annealing the C-60 film confined in the irradia
ted areas forms SiC while the remaining C-60 evaporates off. These res
ults introduce a new method of direct patterning SiC structures on Si
with submicron resolution. (C) 1997 Elsevier Science B.V.