GROWTH OF PATTERNED SIC BY ION MODIFICATION AND ANNEALING OF C-60 FILMS ON SILICON

Silicon carbide films on silicon have been grown by annealing of pre-d eposited C-60 film on silicon at T = 900 degrees C for 300 min. C-60 m olecules are confined on the surface during annealing by a non-volatil e carbon layer produced by irradiation of the C-60 film with an ion gu n (Ar+ or Ga+). During annealing the C-60 film confined in the irradia ted areas forms SiC while the remaining C-60 evaporates off. These res ults introduce a new method of direct patterning SiC structures on Si with submicron resolution. (C) 1997 Elsevier Science B.V.