MAGNETIC-FIELD-INDUCED UNBINDING OF THE OFF-WELL-CENTER D- SINGLET-STATE IN GAAS AL0.3GA0.7AS MULTIPLE-QUANTUM WELLS/

Citation
Zx. Jiang et al., MAGNETIC-FIELD-INDUCED UNBINDING OF THE OFF-WELL-CENTER D- SINGLET-STATE IN GAAS AL0.3GA0.7AS MULTIPLE-QUANTUM WELLS/, Physical review. B, Condensed matter, 56(4), 1997, pp. 1692-1695
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
4
Year of publication
1997
Pages
1692 - 1695
Database
ISI
SICI code
0163-1829(1997)56:4<1692:MUOTOD>2.0.ZU;2-Q
Abstract
Results of far-infrared Fourier-transform magnetotransmission from two GaAs/Al0.3Ga0.7As multiple quantum well samples delta-doped with Si-d onor on- and off-well centers are compared. In contrast to well-center D--ions, the off-well-center D-singlet binding energy decreases with increasing magnetic field between 5.5 and 15 T, as reflected by the de creasing strength of the D- singlet transition and a consequent increa se of the neutral donor 1s-2p(+) transition. This observation represen ts a verification of the predicted magnetic-field induced unbinding (m agnetic evaporation) of shallow impurity states for the off-well-cente r D--ion system.