SINGLE-ELECTRON TUNNELING AT HIGH-TEMPERATURE

Authors
Citation
P. Joyez et D. Esteve, SINGLE-ELECTRON TUNNELING AT HIGH-TEMPERATURE, Physical review. B, Condensed matter, 56(4), 1997, pp. 1848-1853
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
4
Year of publication
1997
Pages
1848 - 1853
Database
ISI
SICI code
0163-1829(1997)56:4<1848:STAH>2.0.ZU;2-W
Abstract
The electromagnetic environment in which a small tunnel junction circu it is embedded plays a crucial role in its transport properties. Altho ugh the theory of single-electron tunneling is well established, few a nalytical results are known. We use a real-time formulation to obtain new predictions for the high-temperature conductance of single-and dou ble-junction systems in series with a resistor. We discuss the implica tions of our results for recently proposed metrological thermometry ba sed on Coulomb blockade of single-electron tunneling.