CARRIER SCATTERING BY NEUTRAL DIVALENT IMPURITIES IN SEMICONDUCTORS -THEORY AND EXPERIMENT

We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based an the scattering of electrons by helium atoms shows excel lent agreement with the tow-temperature mobilities measured for three Ge samples doped with different double accepters; Be, Zn, and Hg. We s how that the scattering cross sections of these double accepters art t he same despite the large difference in ionization energies. This supp orts our assumption that the contribution of the central-cell potentia l to neutral impurity scattering is negligible.