CoSb3 single crystals with low hole concentration (down to 1C(17) cm(-
3)) at 300 K and 2.6 X 10(16) cm(-3) at 90 K) and the highest observed
value of the room-temperature hole mobility (the value is up to 6000
cm(2)/V s, i.e., up to about 1.8 times higher than maximum values prev
iously reported) were grown. The observed temperature dependence of th
e Hall coefficient is explained assuming the existence of an acceptor
impurity band and an additional deep acceptor level. The values of the
activation energies of the shallow and deep accepters, their concentr
ations, as well as the concentration of the compensating donors were c
alculated. It is shown that the scattering due to polar optical phonon
s and nonpolar optical phonons is most important in the high-temperatu
re region. The value of the valence-band deformation potential is esti
mated.