SEGREGATION AND INTERDIFFUSION EFFECTS DURING THE FORMATION OF THE MNCD(ZN)TE(100) INTERFACE/

The formation of the Mn/Cd(Zn)Te(100) interface has been investigated with soft x-ray excited photoelectron and Auger electron spectroscopy. Apart from a metal-semiconductor interface with a valence-band maximu m 1.05 (+/-0.10) eV below the Fermi energy, several interesting effect s such as interface compound formation, Te-segregation, surface photov oltage effects due to metal-induced band bending, and the formation of a secondary Te phase have been observed. The results are discussed in the framework of a layer model. A schematic electronic structure of t he Mn/Cd(Zn)Te(100) interface is derived for different Mn coverages.