THE DEPOSITION OF TIN THIN-FILMS BY FILTERED CATHODIC ARC TECHNIQUES

Citation
Pj. Martin et al., THE DEPOSITION OF TIN THIN-FILMS BY FILTERED CATHODIC ARC TECHNIQUES, IEEE transactions on plasma science, 25(4), 1997, pp. 675-679
Citations number
7
Categorie Soggetti
Phsycs, Fluid & Plasmas
ISSN journal
00933813
Volume
25
Issue
4
Year of publication
1997
Pages
675 - 679
Database
ISI
SICI code
0093-3813(1997)25:4<675:TDOTTB>2.0.ZU;2-B
Abstract
A filtered cathodic are source has been used to deposit thin films of titanium nitride, The properties of the films are influenced by the na ture of the condensation process, TiN films may be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased subst rates at ambient temperature by condensing the Ti+ ion beam under 500 eV N-2(+) nitrogen ion bombardment, In the latter case, the film stoic hiometry was varied from an N:Ti ratio of 0.8 to 1.2 by controlling th e relative arrival rates of Ti and nitrogen ions, Simple models are us ed to describe the evolution of compressive stress as a function of ar rival ratio and the composition of the N-2(+) ion-assisted TiN films.