INITIAL INTERFACE REACTION IN INDIUM AMORPHOUS SELENIUM MULTILAYER THIN-FILMS/

Interface reactions between In and amorphous Se (a-Se) layers have bee n studied using differential scanning calorimetry (DSC) in vapour-depo sited multilayer thin films. The initial interface reaction started at around 100 degrees C with the formation of an In2Se stoichiometric co mpound. A kinetic analysis indicated that the interface reaction is ch aracterized by the two-dimensional growth of preexisting In2Se nuclei to coalescence in the plane of the original In-a-Se interface. The hea ting onset and peak temperatures and the isothermal peak time for the reaction in the DSC scans were found to be independent of the multilay er modulation wavelength, implying a constant nucleation site density with different multilayer wavelengths.