CORE POLARIZATION IN SOLIDS - FORMULATION AND APPLICATION TO SEMICONDUCTORS

Accurate treatment of exchange and correlation effects involving core and valence electrons can he surprisingly important in solid-state cal culations, especially for solids having elements with shallow core ele ctrons, such as Ga and Ge. A local-density-approximation treatment of core-valence interactions leads to errors of similar to 0.4 eV for key features in the band structures of Ge and GaAs, even when valence-val ence interactions are treated in a first-principles, quasiparticle app roach. We apply a core-polarization-potential treatment of corevalence interactions within the framework of such quasiparticle calculations. Final results have errors of similar to 0.1 eV in band-energy differe nces.