We present a comprehensive picture of the As adsorption on the InP(110
) surface based on nb initio density-functional calculations. The bond
ing behavior of single As adatoms is investigated by the calculation o
f the Bom-Oppenheimer energy face. The adatom motion is characterized
by an attractive interaction and a pronounced diffusion channel along
[1(1) over bar0$]. The translationally invariant As/InP(11O)1x1 system
is discussed in terms of an ordered As monolayer and an exchange reac
tion between surface P atoms and As adatoms. The epitaxial continued l
ayer structure represents the ground state of the initial-stage interf
ace between the ordered As monolayer and the InP(110) surface. The exc
hange-reacted surface with one InAs(110) top layer is energetically st
able over a wide range of the In and As chemical potentials, whereas t
he monolayer adsorption occurs preferentially for As-and P-rich prepar
ation conditions. We calculate electronic and vibrational features of
the interface and compare with the available experimental data.