AS ON INP(110) STUDIED WITHIN DENSITY-FUNCTIONAL THEORY

Citation
U. Grossner et al., AS ON INP(110) STUDIED WITHIN DENSITY-FUNCTIONAL THEORY, Physical review. B, Condensed matter, 56(11), 1997, pp. 6719-6726
Citations number
48
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
11
Year of publication
1997
Pages
6719 - 6726
Database
ISI
SICI code
0163-1829(1997)56:11<6719:AOISWD>2.0.ZU;2-E
Abstract
We present a comprehensive picture of the As adsorption on the InP(110 ) surface based on nb initio density-functional calculations. The bond ing behavior of single As adatoms is investigated by the calculation o f the Bom-Oppenheimer energy face. The adatom motion is characterized by an attractive interaction and a pronounced diffusion channel along [1(1) over bar0$]. The translationally invariant As/InP(11O)1x1 system is discussed in terms of an ordered As monolayer and an exchange reac tion between surface P atoms and As adatoms. The epitaxial continued l ayer structure represents the ground state of the initial-stage interf ace between the ordered As monolayer and the InP(110) surface. The exc hange-reacted surface with one InAs(110) top layer is energetically st able over a wide range of the In and As chemical potentials, whereas t he monolayer adsorption occurs preferentially for As-and P-rich prepar ation conditions. We calculate electronic and vibrational features of the interface and compare with the available experimental data.