ELECTRICALLY ACTIVE HYDROGENOUS DEFECTS I N IRRADIATED N-SILICON

Authors
KORSHUNOV FP MARKEVICH VP MEDVEDEVA IF MURIN LI
Citation
Fp. Korshunov et al., ELECTRICALLY ACTIVE HYDROGENOUS DEFECTS I N IRRADIATED N-SILICON, Doklady Akademii nauk BSSR, 38(2), 1994, pp. 35-39
Citations number
15
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
38
Issue
2
Year of publication
1994
Pages
35 - 39
Database
ISI
SICI code
0002-354X(1994)38:2<35:EAHDIN>2.0.ZU;2-X
Abstract
New electrically active centers with negative U are revealed in oxygen -rich Si crystals saturated with hydrogen and irradiated by fast elect rons, These centers have been observed after heat treatment of the irr adiated crystals at temperatures ranging from 275 to 350-degrees-C. Oc cypancy level of given defects (E(-/+) congruent-to E(c)-0.075 eV) and their composition have been determined.