INTERACTION OF O-2 WITH THE BI SI(001) SYSTEM - FROM PASSIVATION TO PROMOTED OXIDATION/

Authors
KOVAL IF MELNIK PV NAKHODKIN NG PYATNITSKY MY AFANASIEVA TV
Citation
If. Koval et al., INTERACTION OF O-2 WITH THE BI SI(001) SYSTEM - FROM PASSIVATION TO PROMOTED OXIDATION/, Surface science, 384(1-3), 1997, pp. 844-847
Citations number
9
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
384
Issue
1-3
Year of publication
1997
Pages
844 - 847
Database
ISI
SICI code
0039-6028(1997)384:1-3<844:IOOWTB>2.0.ZU;2-D
Abstract
Bismuth-covered Si(001) surface has been investigated by means of elec tron energy loss and Auger electron spectroscopy. The submonolayer cov erage of Bi on Si(001) was found to reduce an initial sticking coeffic ient of molecular oxygen by two orders of magnitude in comparison with the clean Si(001) surface. whereas Bi-promoted formation of SiO2-like species was found at oxygen exposures > 10(5) L. (C) 1995 Elsevier Sc ience B.V.