DEVELOPMENT OF HIGH-RESOLUTION SINGLE-ION PSD USING RANDOM-ACCESS MEMORIES

Authors
HAMANO T TAKEBE M HIRAO T NASHIYAMA I KAMIYA T SUDA T SAKAI T
Citation
T. Hamano et al., DEVELOPMENT OF HIGH-RESOLUTION SINGLE-ION PSD USING RANDOM-ACCESS MEMORIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 280-284
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
130
Issue
1-4
Year of publication
1997
Pages
280 - 284
Database
ISI
SICI code
0168-583X(1997)130:1-4<280:DOHSPU>2.0.ZU;2-5
Abstract
Using heavy-ion microbeam, we have examined the feasibility of a Stati c Random Memory (SRAM) as an in situ Position Sensitive Detector (PSD) with bit-cell size resolution for extremely low current ion beams. It is found that SRAM are promising candidates for high-resolution PSD t o diagnose an extremely low current ion microbeam. (C) 1997 Elsevier S cience B.V.