VERIFICATION OF 3-DIMENSIONAL CHARGE-TRANSPORT SIMULATIONS USING ION MICROBEAMS

Optically targeted, ion microbeams provide a useful means of exposing individual structures within an integrated circuit to ionizing radiati on. With this tool, calibrated, low damage, charge collection spectra can be measured from specific circuit structures without preceding ion damage to the structure or surrounding circuitry. This paper presents comparisons of calibrated, low damage, ion microbeam-based charge col lection measurements and three-dimensional, charge transport simulatio ns of charge collection for isolated n- and p-channel field effect tra nsistors under conducting and non-conducting bias conditions.