Be. Fischer et al., SIMULTANEOUS IMAGING OF UPSET-SENSITIVE AND LATCHUP-SENSITIVE REGIONSIN A STATIC RAM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 478-485
Using the GSI heavy ion microprobe and a special hardware circuit for
upset and latchup detection we have-for the first time simultaneously
imaged upset-and latchup-sensitive regions of a 2k x 8 bit static RAM
(HM 65162) for different LET values of the beam and various operating
voltages. Additionally we have mapped the scanned area by secondary el
ectron imaging and ion induced charge imaging to create a data set as
comprehensive as possible for the description of single event processe
s.