THE CHANGE IN THE MECHANISM OF THE POROUS SILICON FORMATION DURING ANODIC POLARIZATION

Authors
GAVRILOV SA ZAVARITSKAYA TN KARAVANSKII VA MELNIK NN PODZOROV VV SOROKINA IN
Citation
Sa. Gavrilov et al., THE CHANGE IN THE MECHANISM OF THE POROUS SILICON FORMATION DURING ANODIC POLARIZATION, Russian journal of electrochemistry, 33(9), 1997, pp. 985-989
Citations number
11
Categorie Soggetti
Electrochemistry
Journal title
Russian journal of electrochemistry → ACNP
ISSN journal
10231935
Volume
33
Issue
9
Year of publication
1997
Pages
985 - 989
Database
ISI
SICI code
1023-1935(1997)33:9<985:TCITMO>2.0.ZU;2-G
Abstract
Formation of layers with different microstructures and photoluminescen ce properties during anodizing under fixed conditions is found to be d etermined by a change in the mechanism of the porous silicon formation . The change in the mechanism is satisfactorily explained by the kinet ics of mass transfer of the reagents and products to the front of the electrochemical reaction. The relation between structural and luminesc ence properties of separate film layers agrees with the quantum size m odel for porous silicon.