HYDROGEN-INDUCED SILICON SURFACE-LAYER CLEAVAGE

Citation
X. Lu et al., HYDROGEN-INDUCED SILICON SURFACE-LAYER CLEAVAGE, Applied physics letters, 71(13), 1997, pp. 1804-1806
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
13
Year of publication
1997
Pages
1804 - 1806
Database
ISI
SICI code
0003-6951(1997)71:13<1804:HSSC>2.0.ZU;2-0
Abstract
Physical mechanisms of hydrogen induced silicon surface layer cleavage were investigated using a combination of microscopy and spectroscopy techniques. The evolution of the silicon cleavage phenomenon is record ed by a series of microscopic images. The underlying hydrogen profiles under (between 250 and 500 degrees C) annealing are characterized by secondary-ion-mass spectroscopy and hydrogen forward scattering experi ments. An idea gas law model calculation suggests that internal pressu re of molecular hydrogen filled microcavities is in the range of Giga- Pascal, high enough to break silicon crystal bond. A dose threshold, w hich prevents cleavage, is observed at 1.6 x 10(17) cm(-2) for 40 kV h ydrogen implantation. (C) 1997 American Institute of Physics.