Physical mechanisms of hydrogen induced silicon surface layer cleavage
were investigated using a combination of microscopy and spectroscopy
techniques. The evolution of the silicon cleavage phenomenon is record
ed by a series of microscopic images. The underlying hydrogen profiles
under (between 250 and 500 degrees C) annealing are characterized by
secondary-ion-mass spectroscopy and hydrogen forward scattering experi
ments. An idea gas law model calculation suggests that internal pressu
re of molecular hydrogen filled microcavities is in the range of Giga-
Pascal, high enough to break silicon crystal bond. A dose threshold, w
hich prevents cleavage, is observed at 1.6 x 10(17) cm(-2) for 40 kV h
ydrogen implantation. (C) 1997 American Institute of Physics.