HIGH-QUALITY LARGE-AREA CDTE(211)B ON SI(211) GROWN BY MOLECULAR-BEAMEPITAXY

We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the home-orientat ion. Large-area CdTe(211)B layers were routinely obtained by optimizin g the growth parameters. From x-ray diffraction, we observed the prese nce of twin-free CdTe(211)B layers, One 8 mu m thick CdTe epilayer had a near-surface etch pit density of 1.5 x 10(5) cm(-2), which surpasse d the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si( 211), or Si(211)substrates. (C) 1997 American Institute of Physics.