C. Gao et al., HIGH-SPATIAL-RESOLUTION QUANTITATIVE MICROWAVE IMPEDANCE MICROSCOPY BY A SCANNING TIP MICROWAVE NEAR-FIELD MICROSCOPE, Applied physics letters, 71(13), 1997, pp. 1872-1874
A recently developed scanning tip microwave near-field microscope has
been improved to achieve a spatial resolution of 100 nm (similar to la
mbda/10(6)). Furthermore, explicit calculations of the field distribut
ion using a simplified model allow quantitative microscopy of dielectr
ic properties for dielectric materials. A detection sensitivity of del
ta epsilon/epsilon similar to 6x10(-4) has been achieved. (C) 1997 Ame
rican Institute of Physics.