DEMONSTRATION OF AN IMIDE COUPLING REACTION ON A SI(100)-2X1 SURFACE BY MOLECULAR LAYER DEPOSITION (VOL 71, PG 662, 1997)

Citation
T. Bitzer et Nv. Richardson, DEMONSTRATION OF AN IMIDE COUPLING REACTION ON A SI(100)-2X1 SURFACE BY MOLECULAR LAYER DEPOSITION (VOL 71, PG 662, 1997), Applied physics letters, 71(13), 1997, pp. 1890-1892
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
13
Year of publication
1997
Pages
1890 - 1892
Database
ISI
SICI code
0003-6951(1997)71:13<1890:DOAICR>2.0.ZU;2-B
Abstract
In this letter, we report the successful growth of an ultrathin organi c film on Si(100)-2 x 1 by reactive coupling of polyimide precursors, Using the molecular layer deposition technique, 1,4-phenylene diamine and pyromellitic dianhydride were sequentially dosed on clean Si(180)- 2 x 1 under ultrahigh vacuum conditions. The interfacial imidization w as initiated by thermal curing at 200 degrees C. High resolution elect ron energy loss spectroscopy was employed to identify surface species. The spectra show clearly, that an oligimide chain has been formed whi ch stands upright on the substrate. The chain bonds to the silicon sub strate via a Si-(NH)-C linkage. (C) 1997 American Institute of Physics .