CRYSTAL-GROWTH AND FABRICATION OF A 1.3-MU-M-WAVELENGTH MULTIPLE-QUANTUM-WELL LASER ON A (211)A INP SUBSTRATE

We demonstrate the fabrication of a long-wavelength laser on a (211) I nP substrate, with the expectation of reducing threshold current densi ty. We found that InGaAsP single quantum wells (SQWs) could be fabrica ted with good optical properties provided the SQW layers were not made too thin. A laser that had an unstrained multiple-quantum-well active layer emitting at 1.3 mu m was fabricated on a (211)A InP substrate. Its threshold current density was 900 A/cm(2), which is comparable to the value for the same type of laser on a (100) substrate. These resul ts suggest that long-wavelength lasers with satisfactory quality can b e fabricated on a (211)A substrate. (C) 1997 American Institute of Phy sics.