LOW-DIMENSIONAL STRUCTURES GENERATED BY MISFIT DISLOCATIONS IN THE BULK OF SI1-XGEX SI HETEROEPITAXIAL SYSTEMS/

Authors
SHIRYAEV SY JENSEN F PETERSEN JW HANSEN JL LARSEN AN
Citation
Sy. Shiryaev et al., LOW-DIMENSIONAL STRUCTURES GENERATED BY MISFIT DISLOCATIONS IN THE BULK OF SI1-XGEX SI HETEROEPITAXIAL SYSTEMS/, Applied physics letters, 71(14), 1997, pp. 1972-1974
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
14
Year of publication
1997
Pages
1972 - 1974
Database
ISI
SICI code
0003-6951(1997)71:14<1972:LSGBMD>2.0.ZU;2-1
Abstract
The capability of misfit dislocations to generate nanostructures in th e bulk of Si1-xGex/Si heteroepitaxial systems is demonstrated. It is s hown that dislocation slip originating from compositionally graded Si1 -xGex layers can produce a range of low-dimensional structures includi ng nanowires, nanodots, and mosaic superlattices. Formation of the nan ostructures is achieved in parallel processing, through a simple two-s tep cycle which includes growth of layered planar structures and postg rowth annealing. (C) 1997 American Institute of Physics.