We describe a technique for direct measurement of the passive optical
mode loss of a semiconductor laser or similar semiconductor waveguide
structure, based upon measurement of the attenuation of optically exci
ted luminescence in the guided mode as a function of distance traveled
along the passive guide. A spectrometer is used to select luminescenc
e in the low energy tail of the spectrum which is subject to very litt
le reabsorption. We have applied the method to a series of highly stra
ined GaInP quantum well laser structures and observe an increase in th
e mode loss from 9.9 cm(-1) for 1% strain to 46 cm(-1) for 1.7% strain
. This correlates with the appearance of clustered regions in the high
ly strained wells observed by transmission electron microscopy (TEM).
(C) 1997 American Institute of Physics.