ANNEALING OF RADIATION DEFECTS IN HELIUM-IMPLANTED SI-SIO2 STRUCTURES

Authors
KASCHIEVA S DANESH P
Citation
S. Kaschieva et P. Danesh, ANNEALING OF RADIATION DEFECTS IN HELIUM-IMPLANTED SI-SIO2 STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 129(4), 1997, pp. 551-553
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
129
Issue
4
Year of publication
1997
Pages
551 - 553
Database
ISI
SICI code
0168-583X(1997)129:4<551:AORDIH>2.0.ZU;2-C
Abstract
Radiation-induced defects in 10 keV He-implanted Si-SiO2 structures ar e studied using thermally stimulated charge release (TSCR) method. Imp lanted samples are treated by UV irradiation for different durations f rom 15 min up to 150 min, or by thermal annealing at 1050 degrees C fo r the same times. The obtained results show that the implantation-indu ced defects are not completely annealed by thermal treatment for 30 mi n, while they are not detectable with TSCR after UV irradiation for 30 min. It is established that new interface states are generated after long UV irradiation (150 min). (C) 1997 Elsevier Science B.V.